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Pulsed electron beam annealing: A tool for post-implantation damage control in SiC

D. J. Brink,H. W. Kunert,J. B. Malherbe,J. Camassel

JOURNAL DE PHYSIQUE IV（2006）

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Abstract
The possibility of reversing ion implantation damage in SiC using pulsed electron beam annealing is investigated. Using Raman spectroscopy, photo luminescence and infrared reflectance it is shown that good recovery can be obtained for an electron-energy fluence of 1.1 J cm(-2).
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Key words
ion implantation,raman spectroscopy,electron beam
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