Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration

The deteriorated radiation effects of very deep-sub-micron (VDSM) MOS transistors with multi-finger are experimentally investigated for the first time. The results show that due to the interaction between reverse narrow channel effect and radiation induced edge effect, multi-finger transistors are more sensitive to radiation in comparison with standard MOSFETs. Larger threshold-voltage shift and higher leakage current are observed. The mechanisms responsible for the effects are briefly discussed. The results demonstrate that special radiation hardening technology should be adopted for multi-finger transistors operating in the radiation environment.