Reactive Ion-Beam Etching Of Mosi2 In Ccl4

Dry etching of sputter‐deposited films using (RIBE) derived from a plasma is reported. The RIBE rates increase linearly with both ion current density (0.1–1 mA/cm2) and ion energy (0.4–1 keV) and are lower than those obtained using inert Ar+ bombardment. Postdeposition annealing in Ar (900°C, 20 min) reduced the RIBE etching rate by ∼15%. Profiles of etched samples are anisotropic (∼5:1 aspect ratio), exhibit no undercutting of the Si under the silicide, and show only minimal trenching. Typical etching rate ratios of to Si or are ∼1:2.