Saturation of Si Activation at High Doping Levels in GaAs
Journal of physics and chemistry of solids(1983)
摘要
Ion implantation of Si is extensively employed in the fabrication of GaAs integrated circuits as an n-type dopant. We have investigated the electrical activation of Si in GaAs with high dose (1017–1019cm−3) room temperature Si implantations in semi-insulating GaAS. A co-implantation of As with Si was used to study the influence of local stoichiometry and substrate morphology on the electrical activation of Si. A van der Pauw method was employed for electrical characterization. Our results show that the previously reported saturation in the free electron concentration at 2 × 1018 cm−3 is not altered by co-implanted As.
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