Application of Proximity Synchrotron Orbital Radiation Lithography and Deep-Ultraviolet Phase-Shifted-Mask Lithography to Sub-Quarter-Micron Complimentary Metal-Oxide-Semiconductor Devices

Journal of vacuum science & technology B, Microelectronics and nanometer structures(1994)

引用 0|浏览18
暂无评分
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要