A new technique for characterizing low-defect SIMOX

Defect density in thin top silicon layer of SIMOX materials was investigated. TEM characterization of low-defect (< 106 cm−2) SIMOX was both cost and time prohibitive to inspect large areas. A new technique using a diluted Secco etch followed by a hydrofluoric acid decoration was developed to identify unambiguously such defects. The technique utilizes the same etchant and equipment used for defect characterization of single-crystalline silicon wafers and is found useful in SOI device development.