Analysis of Si Crystal Irradiated by Highly-Charged Ar Ions Using Rbs-Channeling Technique
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS（2009）
关键词
Irradiation-induced defects in Si,Highly-charged ion,Rutherford backscattering-channeling technique
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要