Optically Active Centers in Eu Implanted, Eu in Situ Doped Gan, and Eu Doped Gan Quantum Dots

L. Bodiou,A. Braud,J. -L. Doualan,R. Moncorge,J. H. Park,C. Munasinghe,A. J. Steckl,K. Lorenz,E. Alves,B. Daudin

JOURNAL OF APPLIED PHYSICS（2009）

引用 45|浏览19

关键词

annealing,doping profiles,energy gap,europium,excitons,gallium compounds,III-V semiconductors,molecular beam epitaxial growth,photoluminescence,semiconductor doping,semiconductor growth,semiconductor quantum dots,semiconductor thin films,wide band gap semiconductors

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