Model Verification for A High-Power-Efficiency Algaas-Gaas Hbt

F Deshours,E Bergeault,G Berghoff,C Pinatel,C DubonChevallier

IEEE microwave and guided wave letters（1996）

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摘要

Heterojunction bipolar transistors (HBT's) with 2700 μm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

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关键词

III-V semiconductors,UHF bipolar transistors,UHF measurement,aluminium compounds,gallium arsenide,heterojunction bipolar transistors,microwave bipolar transistors,microwave measurement,microwave power transistors,power bipolar transistors,semiconductor device models,semiconductor device testing,AlGaAs-GaAs,SHF,UHF,active load-pull measurement system,heterojunction bipolar transistors,high-power-efficiency HBT,model verification,simulation

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