Formation of a Quasi-Periodic Boron Distribution in Silicon, Initiated by Ion Implantation

The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more efficiently in the region of the maximum of the implanted impurity distribution and at the boundaries of the ion irradiation region.