A 65 Nm, 850 MHz, 256 Kbit, 4.3 Pj/access, Ultra Low Leakage Power Memory Using Dynamic Cell Stability and a Dual Swing Data Link
IEEE Journal of Solid-State Circuits（2012）
关键词
Configurable timing,dynamic decoder,dynamic stability,local bit lines,local sense amplifiers,local word lines,low leakage cell,low power circuit design,low swing signalling,SRAM,variability-aware design
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