High Power 0.25 [micro Sign]m Gate GaN HEMTs on Sapphire with Power Density 4.2 W∕mm at 10 GHz

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 mum gate-length AlGaN/GaN HEMTs, were fabricated on sapphire 2 substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm high transconductance up to 223 mS/mm. short-circuit current gain cutoff frequency of (f(T)) 67 GHz, and maximum frequency of oscillation (f(max)) of 102 GHz.