Statistical Soft Error Rate (SSER) Analysis for Scaled CMOS Designs

ACM Trans. Design Autom. Electr. Syst.(2012)

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摘要
This article re-examines the soft error effect caused by radiation-induced particles beyond the deep submicron regime. Considering the impact of process variations, voltage pulse widths of transient faults are found no longer monotonically diminishing after propagation, as they were formerly. As a result, the soft error rates in scaled electronic designs escape traditional static analysis and are seriously underestimated. In this article we formulate the statistical soft error rate (SSER) problem and present two frameworks to cope with the aforementioned sophisticated issues. The table-lookup framework captures the change of transient-fault distributions implicitly by using a Monte-Carlo approach, whereas the SVR-learning framework does the task explicitly by using statistical learning theory. Experimental results show that both frameworks can more accurately estimate SERs than static approaches do. Meanwhile, the SVR-learning framework outperforms the table-lookup framework in both SER accuracy and runtime.
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statistical soft error rate,ser accuracy,soft error effect,table-lookup framework,svr-learning framework,monte-carlo approach,traditional static analysis,statistical learning theory,soft error rate,scaled cmos designs,static approach,support vector machine,static analysis,soft error,monte carlo method,algorithms,monte carlo,performance,process variation
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