Simulation of resistance switching of memory cells based on solid electrolyte
Solid State Communications(2011)
摘要
The electrochemical reaction induced resistance switching of memory cells based on solid electrolyte is simulated by an interface-tracking method using a two-dimensional model. For the switching-on process, the simulating results show that metal dendrites will be formed in the solid electrolyte, switching the device to a low-resistance state. For the switching-off process, the dendrite will be dissolved and the conductive channel eventually breaks down, switching the device to a high-resistance state.
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关键词
A. Insulators,A. Thin films
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