DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
Microelectronic Engineering（2013）
关键词
lfn level,normalized lfn,low-frequency noise behavior,corresponding resistance decrease,charged state,hfo2-based resistive random access,resistance state,low resistance state,conductive filament,high resistance state,lfn type,lfn spectrum,higher normalized lfn,low frequency noise,resistive ram,non volatile memory,quantum point contact
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要