Youdou Zheng - Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronics Science and Engineering, Nanjing University

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论文共 684 篇作者统计合作学者相似作者

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Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

Chuanqi Pan,Xinxin Yu,Fan Li,Hehe Gong,Denggui Wang,Jianjun Zhou,Zhonghui Li,Wen Liu,Dunjun Chen,Shulin Gu,Youdou Zheng,Rong Zhang,Jiandong Ye

IEEE ELECTRON DEVICE LETTERSno. 2 (2024): 164-167

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Insights into Dynamic Switching Behavior and Electric Field Distribution of Depletion-Mode GaN HEMT with Bonding Pad over Active Layout

Lijian Guo,Feng Zhou,Weizong Xu,Fangfang Ren,Dong Zhou,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

SEMICONDUCTOR SCIENCE AND TECHNOLOGYno. 4 (2024)

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Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Tianyang Zhou,Feng Zhou,Quanyou Chen,Xiaofeng Lyu,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Yuanyang Xia,Leke Wu,Ke Wang,Yiheng Li,Tinggang Zhu,Rong Zhang,Youdou Zheng,Hai Lu

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.526-529, (2024)

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Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV·cm²/mg and 95% Conversion Efficiency at 300 W/500 kHz

Feng Zhou,Can Zou,Tianyang Zhou,Weizong Xu,Fangfang Ren,Dong Zhou,Yiwang Wang,Dunjun Chen,Yuanyang Xia,Leke Wu,Ke Wang,Yiheng Li,Tinggang Zhu,Youdou Zheng,Rong Zhang,Hai Lu

IEEE Electron Device Letters（2024）

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Study of Gain Spatial Nonuniformity in N-on-p and P-on-n 4H-Sic Avalanche Photodiodes

Tianyi Li,Yan Zhou,Xiaoqiang Tao,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

IEEE photonics technology letters（2024）

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Ultrathin-Body GaN-on-Sapphire HEMT with Megahertz Switching Capability under Prompt Irradiation Dose Rate Exceeding 1010 Rad(si)/s

Feng Zhou,Quanyou Chen,Can Zou,Weizong Xu,Fangfang Ren,Dong Zhou,Dunjun Chen,Youdou Zheng,Rong Zhang,Jiandong Ye,Hai Lu

IEEE ELECTRON DEVICE LETTERSno. 8 (2024): 1433-1436

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High-performance 4H-Sic EUV Photodiode with Lateral P-N Junction Fabricated by Selective-area Ion Implantation

Yifu Wang,Zhiyuan Wang,Weizong Xu,Feng Zhou,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

IEEE ELECTRON DEVICE LETTERSno. 5 (2024): 857-860

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Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Feng Zhou,Wei Qi,Teng Ma,Can Zou, Junfan Qian,Weizong Xu,Yiwang Wang,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.311-314, (2024)

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Kilovolt, Low-Barrier Ga2O3 JBS Diode with Ultra-Low Forward Voltage

Hehe Gong, Na Sun,Tiancheng Hu,Matthew Porter,Xinxin Yu,Fangfang Ren,Shulin Gu,Youdou Zheng,Rong Zhang,Yuhao Zhang,Jiandong Ye

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.104-107, (2024)

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Chemiresistive Room Temperature H2S Gas Sensor Based on MoO3 Nanobelts Decorated with MnO2 Nanoparticles

Haineng Bai,Cheng Feng, Yiru Chen, Yali Yan,Yamin Feng,Kuili Liu,Baohua Zhang,Jin Wang,Dunjun Chen,Youdou Zheng,Fuqiang Guo

SENSORS AND ACTUATORS B-CHEMICAL (2024)

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