郑雪峰 - School of Microelectronics, Xidian University

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Synergistic Effect of Electrical Bias and Proton Irradiation on the Electrical Performance of Β-Ga2o3 P–n Diode

Shaozhong Yue,Yingzhe Wang,Xuefeng Zheng,Ailing Pan,Yuehua Hong,Xiaohu Wang,Sunyan Gong,Tian Zhu, Fang Zhang,Xiaohua Ma,Yue Hao

APPLIED PHYSICS LETTERSno. 12 (2024)

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P-Type NiO Junction Termination Extension Grown by Pulsed Laser Deposition in Vertical $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky Barrier Diode

Yuehua Hong,Xuefeng Zheng,Hao Zhang,Fang Zhang, Wen Hong,Jianing Li,Yingzhe Wang,Xiaoli Lu,Yunlong He,Xiaohua Ma,Yue Hao

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 3 (2024): 1502-1507

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Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Xinxiang Zhang,Yanrong Cao, Chuan Chen,Linshan Wu,Zhiheng Wang, Shuo Su,Weiwei Zhang,Ling Lv,Xuefeng Zheng,Wenchao Tian,Xiaohua Ma,Yue Hao

MICROMACHINESno. 8 (2024)

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71 GHz-fmax Β-Ga2o3-on-sic RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure

Min Zhou,Hong Zhou, Mengwei Si,Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu,Kui Dang, Peijun Ma,Xiaohua Ma,Xuefeng Zheng,Zhihong Liu,Jincheng Zhang,Yuhao Zhang,Yue Hao

Symposium on VLSI Technologypp.1-2, (2024)

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A New Vertical P-Gan Island Double-Trench Mosfet with High Voltage Resistance and Low Leakage

Ming Du, Haiqing Zhang, Shiqi Jin,Bo Zhang,Wei Mao,Xuefeng Zheng,Yue Hao

crossref（2024）

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Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off R..

Fang Zhang,Xuefeng Zheng,Yunlong He, Wen Hong,Shaozhong Yue,Zijian Yuan,Yehong Li,Yuehua Hong,Yanrong Cao,Ling Lv,Yingzhe Wang,Xiaoli Lu,Xiaohua Ma,Yue Hao

IEEE Transactions on Electron Devices（2024）

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Enhancement of Positive Bevel Β-Ga2o3 Trench Mos Barrier Schottky Diode by Post-Etching Treatment

Fang Zhang,Xue Feng Zheng, Ye Hong Li,Zi Jian Yuan,Shao Zhong Yue, Xi Chen Wang, Yun Long He,Xiao Li Lu,Xiao Hua Ma,Yue Hao

Applied Surface Sciencepp.161569, (2024)

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Effect of Heavy Ion Radiation on Low Frequency Noise Characteristics of AlGaN/GaN High Electron Mobility Transistors

Ling Lue,Mu-Han Xing, Bo-Rui Xue,Yan-Rong Cao,Pei-Pei Hu,Xue-Feng Zheng,Xiao-Hua Ma,Yue Hao

ACTA PHYSICA SINICAno. 3 (2024)

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Impact of High-Temperature Forward Bias Stress on the Electrical Performance Degradation of $\Beta$-Ga$_{\text{2}}$o$_{\text{3}}$ Schottky Barrier Diodes

Sunyan Gong,Xuefeng Zheng,Shaozhong Yue,Yuehua Hong,Fang Zhang,Yingzhe Wang,Xiaohu Wang,Xiaohua Ma,Yue Hao

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 9 (2024): 5233-5238

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Fröhlich Scattering Effects on Electron Mobility in Β-Ga2o3 Power Devices under High Temperature

Yuehua Hong,Xuefeng Zheng,Hao Zhang,Yunlong He,Tian Zhu, Weidong Zhang, Jianfu Zhang,Xiaohua Ma,Yue Hao

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2024)

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(郑雪峰)

教授

论文共 135 篇作者统计合作学者相似作者