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论文共 23 篇作者统计合作学者相似作者

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Device Feasibility of 60-Nm-scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Yun-Ju Cho,Young-Ha Kwon,Nak-Jin Seong,Kyu-Jeong Choi,Hee-Ok Kim,Jong-Heon Yang, Chi-Sun Hwang,Sung-Min Yoon

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 3 (2024): 1839-1844

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Impact of Channel Thickness on Device Scaling in Vertical InGaZnO Channel Charge-Trap Memory Transistors with ALD Al2O3 Tunneling Layer

Yun-Ju Cho,Young -Ha Kwon,Nak-Jin Seong,Kyu-Jeong Choi, Chi-Sun Hwang,Sung- Min Yoon

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

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Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

Dong-Hee Lee,Young-Ha Kwon, Nak-Jin Seong,Kyu-Jeong Choi,Jong-Heon Yang,Chi-Sun Hwang,Sung-Min Yoon

ELECTRONIC MATERIALS LETTERS (2024)

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Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO2 Gate Stacks with Vertical Channel Configurations

Dong-Hee Kim,Young-Ha Kwon,Nak-Jin Seong,Kyu-Jeong Choi,Jong-Heon Yang,Chi-Sun Hwang,Sung-Min Yoon

IEEE ELECTRON DEVICE LETTERSno. 9 (2024): 1673-1676

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Synergistic Effects of Deposition Temperatures for Active and Gate Insulator of Top-Gate Thin-Film Transistors Using InGaZnO Channels Prepared by Thermal Atomic-Layer Deposition

Ye-Jin Seo, Jae-Wook Lee,Young-Ha Kwon, Nak-Jin Seong,Kyu-Jeong Choi, Sung-Min Yoon

ACS Applied Electronic Materials (2024)

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Effective Strategies for Current Boosting in a Mesa-Shaped In-Ga-Zn-O Vertical-Channel Thin-Film Transistor with a Short-Channel Length of 40 Nm

Chae-Eun Oh,Young-Ha Kwon, Nak-Jin Seong,Kyu-Jeong Choi,Sung-Min Yoon

JOURNAL OF MATERIALS CHEMISTRY Cno. 36 (2024): 14455-14468

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Device-level XPS Analysis for Physical and Electrical Characterization of Oxide-Channel Thin-Film Transistors

Yun-Ju Cho,Young-Ha Kwon, Nak-Jin Seong,Kyu-Jeong Choi, Myung Keun Lee,Gyungtae Kim, Sung-Min Yoon

JOURNAL OF APPLIED PHYSICSno. 7 (2024)

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Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

Dong-Hee Lee,Young-Ha Kwon,Nak-Jin Seong,Kyu-Jeong Choi,Jong-Heon Yang, Chi-Sun Hwang,Sung-Min Yoon

IEEE ELECTRON DEVICE LETTERSno. 3 (2024): 404-407

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Comparative Analysis on Negative-Bias-illumination-stress Instabilities Between Planar- and Vertical-Channel Thin-Film Transistors Using InGaZnO Active Channels Prepared by Atomic-Layer Deposition

Ji-Won Kang, Dong-Hee Lee,Young-Ha Kwon, Nak-Jin Seong,Kyu-Jeong Choi,Chi-Sun Hwang,Sung-Min Yoon

Materials Science in Semiconductor Processing (2024): 108665

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Impact of Al2O3 Spacers on the Improvement in Short-Channel Effects for the Mesa-Shaped Vertical-Channel In-Ga-Zn-O Thin-Film Transistors with a Channel Length below 100 Nm

Chae-Eun Oh,Young -Ha Kwon,Nak-Jin Seong,Kyu-Jeong Choi,Sung -Min Yoon

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

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