Yichuan Zhang - Institute of Micro-Electronics, Chinese Academy of Sciences

基本信息

浏览量：0

职业迁徙

个人简介

暂无内容

研究兴趣

论文共 19 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选

High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with Low Noise and High Linearity for Millimeter Waves

Jing Yuan,Guan-Jun Jing, Jian-Chao Wang, Liu Wang,Run-Hua Gao,Yi -Chuan Zhang,Yi -Xu Yao,Ke Wei,Yan -Kui Li,Xiao -Juan Chen

JOURNAL OF INFRARED AND MILLIMETER WAVESno. 2 (2024): 200-206

引用0浏览0引用

Ka Band GaN MIS-HEMT with ALD-SiN Gate Dielectric and Lp-SiN Passivation Layer

Ke Wei,Yichuan Zhang, Sheng Zhang, Xiaoqiang He,Jiaqi Guo, Kaiyu Wang, RuiZhe Zhang,Xinhua Wang,Sen Huang, Haibo Ying,Yankui Li,Weijun Luo,Jiebin Niu,Xinyu Liu

2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024pp.1049-1052, (2024)

引用0浏览0EIWOS引用

Gate Trench Dry Etching Technology with Damage Blocking Layer for GaN HEMT Devices

Jiaqi Guo,Ke Wei,Sheng Zhang, Xiaoqiang He,Yichuan Zhang, Ruizhe Zhang, Kaiyu Wang, Jianchao Wang, Ailing Zhou,Sen Huang,Yingkui Zheng,Xiaojuan Chen,Xinhua Wang,Xinyu Liu

VACUUM (2024)

引用0浏览0引用

0.18 Db Low-Noise Figure at 10 GHz for GaN MIS-HEMT with Plasma-Enhanced Atomic Layer Deposition SiN Layer

Xinyu Liu,Sheng Zhang,Ke Wei,Jiaqi Guo, Xiaoqiang He,Yichuan Zhang,Haibo Yin,Sen Huang,Xiaojuan Chen,Yingkui Zheng,Xinhua Wang,Sihua Ouyang,Yankui Li

IEEE ELECTRON DEVICE LETTERSno. 7 (2023): 1080-1083

引用0浏览0EIWOS引用

High-efficiency AlN/GaN MIS-HEMTs with SiNx Insulator Grown In-Situ for Millimeter Wave Applications

Xiao-Juan Chen,Yi-Chuan Zhang, Shen Zhang,Yan-Kui Li,Jie-Bin Niu,Sen Huang,Xiao-Hua Ma,Jin-Cheng Zhang,Ke Wei

JOURNAL OF INFRARED AND MILLIMETER WAVESno. 4 (2023): 483-489

引用0浏览0引用

High Power Added Efficiency AlGaN/GaN MIS-HEMTs for Wide Band Application

Xiao-Juan Chen, Shen Zhang,Yi-Chuan Zhang,Yan-Kui Li,Run-Hua Gao,Xin-Yu Liu,Ke Wei

红外与毫米波学报（2023）

引用0浏览0引用

Improved stability of GaN MIS-HEMT with 5-nm plasma-enhanced atomic layer deposition SiN gate dielectric

Xinyu Liu,Sheng Zhang,Ke Wei,Yichuan Zhang,Haibo Yin,Xiaojuan Chen,Sen Huang,Guoguo Liu,Yingkui Zheng,Tingting Yuan,Jiebin Niu,Xinhua Wang

IEEE Electron Device Lettersno. 9 (2022): 1-1

引用4浏览0EIWOS引用

Improved breakdown characteristic of AlGaN/GaN HEMTs with a width gradient recessed dual-gate structure

Sheng Zhang,Ke Wei,Yi-chuan Zhang,Xiao-juan Chen,Xin-Yu Liu,Jie-bin Niu

Semiconductor Science and Technologyno. 11 (2022): 115012-115012

引用0浏览0引用

7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer

Sheng Zhang,Ke Wei,Yichuan Zhang,Xiaojuan Chen,Sen Huang,Guoguo Liu,Yingkui Zheng,Tingting Yuan,Xinhua Wang,Yankui Li,Jiebin Niu,Xinyu Liu

IEEE Electron Device Letters（2021）

引用8浏览0EIWOS引用

Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT with 5-Nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

Sheng Zhang,Xinyu Liu,Ke Wei,Sen Huang,Xiaojuan Chen,Yichuan Zhang,Yingkui Zheng,Guoguo Liu,Tingting Yuan,Xinhua Wang,Haibo Yin, Yao,Jiebin Niu

IEEE Transactions on Electron Devices（2021）

引用19浏览0EIWOS引用

加载更多

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn