Yoshiaki Asao

Yoshiyuki Asao was born in Hiroshima, Japan, in 1963. He received the B.S. and M.S. degrees in electric engineering from Osaka University, Osaka, Japan, in 1986 and 1988, respectively. He joined Toshiba Corporation, Kawasaki, Japan, in 1988, where he was engaged in the Semiconductor Device Engineering Laboratory for research and development of the 16-Mb DRAM process technologies. From 1993 to 1996, he was at IBM East Fishkill Facility, East Fishkill, NY, where he worked on the development of 256-Mb DRAM with IBM Corporation and Siemens AG. Since 1997, he has been working on the development of the device and process technologies for next-generation memories at SoC Research & Development Center, Yokohama, Japan.