Xiaolei Wang - Institute of Microelectronics, Chinese Academy of Sciences 1

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个人简介

Wang Xiaolei, photograph and biography not available at the time of publication.

研究兴趣

论文共 19 篇作者统计合作学者相似作者

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Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain

Xueyin Su, Binbin Xu,Bo Tang,Jing Xu,Jinbiao Liu,Yan Cui,Meiyin Yang, Bohan Chen, Keyou Tong, Guanyuan Zhao,Binhong Li,Xiaolei Wang,Tianchun Ye,Jun Luo

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYno. 6 (2024)

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Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current

Fengbin Tian,Xiaoqing Sun,Songwei Li,Shuangshuang Xu,Junshuai Chai,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Jing Zhang,Xiaolei Wang,Wenwu Wang

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 2 (2024): 1040-1047

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Wake-Up Free Hf0.5Zr0.5O2 FerroelectricCapacitor by Annealing and Insertinga Top Dielectric Layer

Min Liao,Junshuai Chai,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Xiaolei Wang, Jing Zhang,Wenwu Wang

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 10 (2024): 6022-6026

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Unique Consecutive RTN Characteristics Coupled with Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs

Fan Zhang,Hong Yang,Qingzhu Zhang,Yue Peng,Jiahui Duan,Hao Xu,Jiali Huo,Xiaolei Wang,Gaobo Xu,Zhaohao Zhang,Zhenhua Wu,Genquan Han,Huaxiang Yin,Yan Liu

IEEE ELECTRON DEVICE LETTERSno. 4 (2024): 566-569

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Switching Dynamics of HfO

$_{\text{2}}$

–ZrO

$_{\text{2}}$

Nanolaminates With Different Laminate Thicknesses

Xiaoyu Ke,Junshuai Chai,Xianzhou Shao,Jiahui Duan,Xiaoqing Sun, Shuai Yang,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Xiaolei Wang,Jing Zhang,Wenwu Wang

IEEE Transactions on Electron Devicesno. 99 (2024): 1-8

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Switching Dynamics of HfO$_{\text{2}}$–ZrO$_{\text{2}}$ Nanolaminates with Different Laminate Thicknesses

Xianglin Ke,Junshuai Chai,Xianzhou Shao, Jing Duan,Xiaoqing Sun,Yang Shen,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Xiaolei Wang, Jing Zhang,Wenwu Wang

IEEE transactions on electron devices/IEEE transactions on electron devicespp.1-8, (2024)

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In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

Yuanquan Huang, Hongye Yuan,Tiancheng Gong,Yuan Wang,Pengfei Jiang, Wei, Yang,Junshuai Chai,Zhicheng Wu,Xiaolei Wang,Qing Luo

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 9 (2024): 5388-5392

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Switching Dynamics of HfO$_{\text{2}}$–ZrO$_{\text{2}}$ Nanolaminates With Different Laminate Thicknesses

Xiaoyu Ke,Junshuai Chai,Xianzhou Shao,Jiahui Duan,Xiaoqing Sun, Shuai Yang,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Xiaolei Wang,Jing Zhang,Wenwu Wang

IEEE Transactions on Electron Devicespp.1-8, (2024)

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Investigation of Hf0.5Zr0.5O2 Ferroelectric Film Sat Low Thermal Budget (300°C)

Saifei Dai,Junshuai Chai,Jiahui Duan,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu, Jing Zhang,Xiaolei Wang,Wenwu Wang

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 8 (2024): 5150-5155

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Investigation of Charge Trapping Induced Trap Generation in Si FeFET with Ferroelectric Hf0.5Zr0.5O2

Xinpei Jia,Junshuai Chai,Jiahui Duan,Xiaoqing Sun,Xianzhou Shao,Jinjuan Xiang,Kai Han,Yanrong Wang,Hao Xu,Xiaolei Wang,Jing Zhang,Wenwu Wang

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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