Wataru Saito (M'04) received the B.S., M.S., and Ph.D. degrees in electrical and electronics engineering from Tokyo Institute of Technology, Tokyo, Japan, in 1994, 1996, and 1999, respectively. Since 1999, he has been with the Discrete Semiconductor Division, Semiconductor Company, Toshiba Corporation, Kawasaki, Japan, where he has been engaged in the development of power semiconductor devices. His current interest is basic researches on the next-generation power semiconductor devices including wide bandgap semiconductor materials applications. Dr. Saito is a member of Japan Society of Applied Physics and the Institute of Electronics, Information and Communication Engineers.