Woojin Kim - IMEC | 人才画像

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论文共 20 篇作者统计合作学者相似作者

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Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM

Bowen Wang,Fernando García-Redondo,Marie Garcia Bardon,Hyungrock Oh, Mohit Gupta,Woojin Kim, Diego Favaro, Yukai Chen,Wim Dehaene

IEEE transactions on nanotechnology（2024）

引用0浏览0EIWOS引用

Orbital Hall Magnetoresistance in Cr/CoFeB Structures

Eunkang Park,Nyun Jong Lee,Seyeop Jeong,Sanghoon Kim,Min-Gu Kang,Soogil Lee,Byong-Guk Park,Woojin Kim

JOURNAL OF THE KOREAN MAGNETICS SOCIETY（2023）

引用0浏览0引用

Design Exploration of IGZO Diode Based VCMA Array Design for Storage Class Memory Applications

M. Gupta,M. Perumkunnil,A. Fantini, S. A. Chamazcoti,W. Kim,M. G. Bardon,G. S. Kar,A. Furnemont

ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)pp.241-244, (2022)

引用2浏览0EIWOS引用

Impact of Ambient Temperature on the Switching of Voltage-Controlled Perpendicular Magnetic Tunnel Junction

Y. C. Wu,W. Kim,S. Van Beek,S. Couet,R. Carpenter,S. Rao,S. Kundu,J. Van Houdt,G. Groeseneken,D. Crotti,G. S. Kar

Applied physics letters（2021）

引用7浏览0引用

Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

Y. C. Wu,K. Garello,W. Kim,M. Gupta,M. Perumkunnil,V Kateel,S. Couet,R. Carpenter,S. Rao,S. Van Beek, K. K. Vudya Sethu,F. Yasin,D. Crotti,G. S. Kar

Physical review appliedno. 6 (2021)

引用32浏览0引用

STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application

S. Rao,W. Kim,S. van Beek,S. Kundu,M. Perumkunnil,S. Cosemans,F. Yasin,S. Couet,R. Carpenter,B. J. O'Sullivan,S. H. Sharifi,N. Jossart,L. Souriau,L. Goux,D. Crotti,G. S. Kar

2021 IEEE International Memory Workshop (IMW)pp.80-83, (2021)

引用11浏览0EIWOS引用

Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient >= 100fJ/Vm

R. Carpenter,W. Kim,K. Sankaran, N. Ao, M. Ben Chroud,A. Kumar,A. Trovato,G. Pourtois,S. Couet,G. S. Kar

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2021）

引用5浏览0EIWOS引用

Study of Precessional Switching Speed Control in Voltage-Controlled Perpendicular Magnetic Tunnel Junction

Y. C. Wu,W. Kim,S. Couet,K. Garello,S. Rao,S. Van Beek,S. Kundu,S. Houshmand Sharifi,D. Crotti,J. Van Houdt,G. Groeseneken,G. S. Kar

AIP advances（2020）

引用3浏览0引用

Deterministic and Field-Free Voltage-Controlled MRAM for High Performance and Low Power Applications

Y. C. Wu,W. Kim,K. Garello,F. Yasin,G. Jayakumar,S. Couet,R. Carpenter,S. Kundu,S. Rao,D. Crotti,J. Van Houdt,G. Groeseneken,G. S. Kar

2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2020）

引用9浏览0EIWOS引用

Manufacturable 300mm Platform Solution for Field-Free Switching SOT-MRAM

K. Garello,F. Yasin,H. Hody,S. Couet,L. Souriau,S. H. Sharifi,J. Swerts,R. Carpenter,S. Rao,W. Kim, J. Wu, K. K. Sethu,M. Pak,N. Jossart,D. Crotti,A. Furnemont,G. S. Kar

2019 SYMPOSIUM ON VLSI TECHNOLOGY（2019）

引用1浏览0EIWOS引用

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