Vladimir A. Haisler

Vladimir A. Haisler graduated from Novosibirsk State Technical University, Novosibirsk, Russia, in 1977. He received the Candidate Degree in physics and mathematics in 1985 and the D.Sc. degree (Habilitation) in 1996, both from the Institute of Semiconductor Physics, Novosibirsk. He is the Leading Scientist with the Institute of Semiconductor Physics and Professor at Novosibirsk State Technical University. His research interests include physical processes in nanostructures and development of novel nanophotonic devices: VCSELs and single photon emitters.