Tomohiro Yamaguchi - Kogakuin University

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Importance of Dissolving Source Precursor of Ga(C5H7O2)3 with HCl in Mist CVD for Α-Ga2o3 Growth

Rie Yamada,Atsushi Sekiguchi,Takeyoshi Onuma,Tohru Honda,Tomohiro Yamaguchi

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials (2022)

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Control of Mesa Shape by ICP-RIE Condition to Fabricate Monolithically Integrated Micro-LEDs

Yamato Yamazaki,Takeyoshi Onuma,Tomohiro Yamaguchi, Toshio Honda

IDW/Proceedings of the International Display Workshopspp.316-316, (2022)

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Mobility Improvement of B-doped in 2 O 3 Transparent Conductive Film with a Small Amount of Impurity

Shun Mori, Yukiya Ichinoseki,Kotaro Watanabe,Kaito Oe,Hiroki Nagai,Tomohiro Yamaguchi,Takeyoshi Onuma,Toshio Honda, Satoru Aikawa

The Japan Society of Applied Physics (2021)

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Dopant Concentration Dependence of Surface Roughness and Electrical Conductivity on CaF 2 -Doped in 2 O 3 Transparent Conductive Film

Kaito Oe,Shun Mori,Kotaro Watanabe,Hiroki Nagai,Tomohiro Yamaguchi,Takeyoshi Onuma, Toshio Honda, Satoru Aikawa

The Japan Society of Applied Physics (2021)

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Characterization of GaInN Multi-Layer Grown on Strain-Controlled Layer by RF-MBE

Masaki Matsuda,Ryuichi Yoshida,Kaigo Tahara,Tomohiro Yamaguchi,Takeyoshi Onuma, Toshio Honda

The Japan Society of Applied Physics (2021)

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Fabrication of Line Electrodes on Oblique Surface of Micro-LED Pixels and Impact on Their Characteristics

Hiroyoshi Chikui,Takeyoshi Onuma,Tomohiro Yamaguchi,Tohru Honda

IDW/Proceedings of the International Display Workshopspp.291-291, (2021)

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Charge Transfer and Carrier-Type Conversion of N-Type SnO 2 Thin-Film by N 2 Annealing

Kotaro Watanabe,Takuma Kawaguchi,Tomohiro Yamaguchi,Takeyoshi Onuma, Toshio Honda, Satoru Aikawa

The Japan Society of Applied Physics (2021)

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Effect of N-Gan Flat Layer on InGaN/AlGaN MQWs in GaN-based Nanocolumns

Jumpei Yamada, T. Honda, Kota Yoshida,Rie Togashi, Ichiro Nomura,Tomohiro Yamaguchi,Toshio Honda,Katsumi Kishino

The Japan Society of Applied Physics（2021）

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Optical Properties of InGaN / AlGaN MQWs on (0001) and (10-11) Plane InGaN / GaN Nanocolumns

Jumpei Yamada,T. Honda,Ai Mizuno,Rie Togashi,Ichirou Nomura,Tomohiro Yamaguchi, Toshio Honda,Katsumi Kishino

The Japan Society of Applied Physics (2021)

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Changes in the Lattice Relaxation Process for the Number of Si Layer Inserted at the Initial Stage of GaInN Growth on GaN

Hiroyuki Yokoyama,Tomohiro Yamaguchi,T. Sasaki,Soichiro Ohno,Takanori Kiguchi,Hiroki Hirukawa, Shinya Fujikawa,Masamitu Takahasi,Takeyoshi Onuma, Toshio Honda

The Japan Society of Applied Physics（2021）

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