Takato Nakanuma - Graduate School of Engineering, Osaka University

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论文共 13 篇作者统计合作学者相似作者

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Generation of Single Photon Emitters at a SiO2/SiC Interface by High-Temperature Oxidation and Reoxidation at Lower Temperatures

Kentaro Onishi,Takato Nakanuma,Kosuke Tahara,Katsuhiro Kutsuki, Takayoshi Shimura,Heiji Watanabe,Takuma Kobayashi

APPLIED PHYSICS EXPRESSno. 5 (2024)

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Characterization of Nitrided SiC(1 1‾ 00) MOS Structures by Means of Electrical Measurements and X-ray Photoelectron Spectroscopy

Takuma Kobayashi,Asato Suzuki,Takato Nakanuma,Mitsuru Sometani,Mitsuo Okamoto,Akitaka Yoshigoe, Takayoshi Shimura,Heiji Watanabe

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING（2024）

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Control on the Density and Optical Properties of Color Centers at SiO2/SiC Interfaces by Oxidation and Annealing

Takato Nakanuma,Kosuke Tahara,Katsuhiro Kutsuki,Takayoshi Shimura,Heiji Watanabe,Takuma Kobayashi

APPLIED PHYSICS LETTERSno. 10 (2023)

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Investigation of Reliability of NO Nitrided SiC(1100) MOS Devices

Takato Nakanuma,Asato Suzuki,Yu Iwakata,Takuma Kobayashi,Mitsuru Sometani,Mitsuo Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe

2022 IEEE International Reliability Physics Symposium (IRPS) (2022)

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Analysis of Leakage Current Mechanisms in NO-nitrided SiC(1-100) MOS Devices

Alata A. Suzuki,Takato Nakanuma, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto,Akitaka Yoshigoe,Takayoshi Shimura,Heiji Watanabe

openalex（2022）

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Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(112̄0) Interfaces

Takato Nakanuma,Yu Iwakata, Arisa Watanabe,Takuji Hosoi,Takuma Kobayashi,Mitsuru Sometani,Mitsuo Okamoto,Akitaka Yoshigoe, Takayoshi Shimura,Heiji Watanabe

Japanese journal of applied physicsno. SC (2022): SC1065-SC1065

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Investigation of Reliability of NO Nitrided SiC(1-100) MOS Devices

Takato Nakanuma,Asato Suzuki,Yu Iwakata,Takuma Kobayashi,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe,Mitsuru Sometani,Mitsuo Okamoto

International Reliability Physics Symposium (2022)

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Investigation of reliability of NO nitrided SiC(1(1)over-bar00) MOS devices

Takato Nakanuma,Asato Suzuki,Yu Iwakata,Takuma Kobayashi,Mitsuru Sometani,Mitsuo Okamoto,Takuji Hosoi, Takayoshi Shimura,Heiji Watanabe

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)

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Impact of nitridation on the reliability of 4H-SiC(1120) MOS devices

Takato Nakanuma,Takuma Kobayashi,Takuji Hosoi,Mitsuru Sometani,Mitsuo Okamoto,Akitaka Yoshigoe, Takayoshi Shimura,Heiji Watanabe

Applied physics express（2022）

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Investigation of Nitrogen Profiles and Interface Properties of SiO 2 /Non-Basal-plane 4H-Sic Interfaces Annealed in NO

Takato Nakanuma,Yu Iwakata,Takuma Kobayashi,Mitsuru Sometani,Mitsuo Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe

The Japan Society of Applied Physics (2021)

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