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个人简介
Martin Strassburg received the Ph.D. degree in semiconductor physics from the Technical University of Berlin, Berlin, Germany, in 2002. From 2003 to 2005, he received the Feodor-Lynen Fellowship of the Humboldt-Foundation to pursue research on the development of group-III nitride materials for solid-state lighting, high-power electronics, solar cell, and spintronics applications from the Georgia Institute of Technology, Atlanta, GA, USA. In 2005, he joined OSRAM Opto Semiconductors GmbH, Regensburg, Germany. Since 2006, he has been responsible for the nitride MOVPE development at the Department of Advanced Concepts and Engineering. Since 2012, he has headed the open innovation activities, and is responsible for the technology innovation. He holds numerous patents in this area, and has co-authored over 100 papers on material development for optoelectronic applications.
研究兴趣
论文共 223 篇作者统计合作学者相似作者
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Light-Emitting Devices, Materials, and Applications XXVI (2022)
Conny Becht,Michael Binder,Bastian Galler, Juergen Off, Maximilian Tauer,Alvaro Gomez-Iglesias,Heng Wang,Martin Strassburg,Ulrich Theodor Schwarz
GALLIUM NITRIDE MATERIALS AND DEVICES XVII (2022)
Light-Emitting Devices, Materials, and Applications XXV (2021): 1170602
Nanomaterialsno. 4 (2021): 836-836
GAN, AIN, INN AND RELATED MATERIALSno. 1 (2021): 569-+
Linus Krieg,Florian Meierhofer, Sascha Gorny, Stefan Leis,Daniel Splith,Zhipeng Zhang,Holger von Wenckstern,Marius Grundmann,Xiaoxue Wang,Jana Hartmann,Christoph Margenfeld,Irene Manglano Clavero,Adrian Avramescu,Tilman Schimpke,Dominik Scholz,Hans-Jürgen Lugauer,Martin Strassburg,Jörgen Jungclaus,Steffen Bornemann,Hendrik Spende,Andreas Waag,Karen K. Gleason,Tobias Voss
Light-Emitting Devices, Materials, and Applications XXIV (2019)
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作者统计
#Papers: 223
#Citation: 7049
H-Index: 37
G-Index: 76
Sociability: 7
Diversity: 3
Activity: 7
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