基本信息
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个人简介
Shih Yen Lin was born in Taiwan, R.O.C., on November 11, 1972. He received the B.S. degree in physics and the M.S. and Ph.D. degrees in electrical engineering from the National Taiwan University, Taipei, Taiwan, R.O.C., in 1995, 1997, and 2001, respectively. His Ph.D. dissertation concerned the characteristics of the InAs–GaAs QD structure and its application in infrared photodetectors.
From 2001 to 2002, he was the Deputy to the manager with the Land Mark Optoelectronics Corporation, where he developed multiwavelength LD epi-wafers based on MOCVD. In 2003, he joined the Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute (ITRI), Taiwan, R.O.C., where he is currently a Researcher. His current research is focused on the development of advanced nanodevices.
研究兴趣
论文共 213 篇作者统计合作学者相似作者
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Zheng-Zhe Chen,Hsiang-Ting Lin, Chiao-Yun Chang, Adil Muhammad,Po-Cheng Tsai,Tsung Sheng Kao, Chi Chen,Shu-Wei Chang,Shih-Yen Lin,Min-Hsiung Shih
arxiv(2024)
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ADVANCED OPTICAL MATERIALSno. 7 (2024)
APL Materialsno. 3 (2024): 031125-031125-10
Scientific Reportsno. 1 (2023): 1-7
Advanced photonics researchno. 9 (2023)
ACS APPLIED NANO MATERIALSno. 23 (2023): 21688-21694
NeuroImage: Clinical (2023): 103441-103441
ACS APPLIED ELECTRONIC MATERIALSno. 11 (2023): 6384-6391
Nanoscaleno. 3 (2023): 1347-1356
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作者统计
#Papers: 214
#Citation: 2792
H-Index: 25
G-Index: 43
Sociability: 6
Diversity: 0
Activity: 2
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