S. J. Kim

Sang-Yun Kim was born in Ulsan, Korea, in 1978. He received the B.S. and M.S. degrees from Kyungpook National University, Daegu, Korea, in 2002 and 2004, respectively, both in electrical and electronic engineering. In 2006, he joined the Research and Development Center of Memory division, Samsung Electronics, Hwaseong, Korea. His research interests include nanoscale CMOS (bulk FinFET) device simulation, reliability analysis of bulk FinFET, and DRAM circuit design.