Sophie Bouchoule received the Ph.D. thesis on 1.55-μm semiconductor laser diodes. She joined France Telecom-CNET laboratories, then OPTO+ joint Alcatel-France Telecom Laboratory, where she was involved in the processing of high-speed laser sources at 1550 nm for emerging 40 Gb/s applications. In 2001, she joined CNRS, Laboratoire de Photonique et de Nanostructures, Marcoussis, France, where she has been involved in the development of long-wavelength laser (V(E)CSEL) sources and III-V laser processing. Since 2007, she has also been engaged in the development of semiconductor UV-visible micocavity emitters. She is an author or co-author of 90 papers in international journals and has contributed to more than 150 presentations at international conferences.