ruilong xie

Ruilong Xie (S'09) received the B.Eng. degree (with highest honors) in electrical and computer engineering in 2006 from the National University of Singapore (NUS), Singapore, where he is currently working toward the Ph.D. degree (as a part-time Ph.D. student) in the Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, NUS. He was with the Institute of Microelectronics (IME), Agency for Science, Technology and Research (A ∗STAR), Singapore. He is currently with the Technology Development and Research Department, Globalfoundries, Singapore. At NUS and IME, his research interests mainly included germanium (Ge) channel MOSFETs with high-permittivity (high-$k$) gate dielectrics and metal-induced lateral crystallization on Ge.