基本信息
浏览量:0
![](https://originalfileserver.aminer.cn/sys/aminer/icon/show-trajectory.png)
个人简介
Pierre Boulenc received the Ph.D. degree in materials science from the Universite de Lille, Lille, France, in 2007.
He joined STMicroelectronics, Grenoble, France, in 2006, as a TCAD Engineer specializing in CMOS and bipolar transistors modeling as well as CMOS image sensors process and device simulations. In 2013, he joined imec, Leuven, Belgium, as a Pixel Device Engineer with a focus on developing advanced pixel architectures, such as charge-coupled device (CCD)-in-CMOS, gated imaging, and quantum dots on silicon image sensors. Since 2020, he has been with Gpixel NV, Antwerp, Belgium, as a Pixel TCAD Design Manager.
研究兴趣
论文共 3 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Yun-Tzu Chang,Pierre Boulenc,Linkun Wu, Maarten Rosmeulen,Pol Van Dorpe,Chris Van Hoof,Andreas Süss, Kasteelpark Arenberg
semanticscholar(2019)
引用0浏览0引用
0
0
作者统计
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn