Pei-Ying Du

Pei-Ying Du received her B.S. degree in engineering and system science from National Tsing-Hua University (NTHU), Hsinchu, Taiwan, in 2004, and Ph.D. degree in electrical engineering from National Chiao-Tung University (NCTU), Hsinchu, Taiwan, in 2009. In 2003, she won College Student Research Creativity Award from the National Science Council, Taiwan, and also won Kwoh-Ting Li Scholarship Award and King Kai-Yung Scholarship Award from CICT Foundation in 2004 and 2006, respectively. Her Ph.D. thesis was awarded by Honorable Mention of Institude of Electronics of NCTU in 2009. She joined the Emerging Central Lab. (ECL) in Macronix International Co., Ltd. (MXIC), Hsinchu, Taiwan, in 2006, where she engaged in the theoretical modeling and reliability physics of nitride trapping Flash memory. From March, 2010 to Jan., 2012, she was assigned to IBM/Macronix Phase Change Memory (PCM) Joint Project in IBM T.J. Watson Research Center, NY, and engaged in PCM reliability. She currently is the project deputy department manager of nano-technology R&D department and engages in developing 3D nitride trapping NAND Flash memory. Dr. Du has published more than 50 papers in the premier semiconductor conferences and journals including IEDM, Symposium on VLSI Technology, IRPS, IMW, T-ED, and etc. She is well-recognized in memory reliability territory because of her unique insights into the operations of nitride trapping memories. Dr. Du served in the program committee of International Memory Workshop (IMW) from 2012 to 2016, and was the Local Chair and the Short Course Chair of IMW, in 2014 and 2015, respectively. She also served as a member of the Memory Technology (MT) sub-committee at International Electron Devices Meeting (IEDM) from 2017 to 2018. She has been serving as Associate Editor of IEEE-TED since 2018.