Nicolas Breil was born in La Rochelle, France. He received the M.Eng. and M.S. degrees from the Institut National des Sciences Appliquées, Toulouse, France, in 2004. In 2003 and 2004, he was with STMicroelectronics, Crolles, France, working on the integration of plasma doping and highly doped epitaxy deposition processes in CMOS and BiCMOS technologies, respectively. He is currently with STMicroelectronics, working toward the Ph.D. degree in collaboration with the Institut d'Electronique de Microélectronique et de Nanotechnologie, Villeneuve d'Ascq, France, and with the Commissariat à l'Energie Atomique–Laboratoire d'Electronique de Technologie (CEA–LETI), Grenoble, France. His main research interests include the development of alternative solutions for ultrashallow-junction contacts in CMOS devices, including band-edge silicides, dopant segregation techniques, and original self-aligned integration approaches.