Mario Saggio

Mario Giuseppe Saggio was born in 1967. He received the Laurea degree in physics (summa cum laude) from the University of Catania, Catania, Italy, in 1991. From 1993 to 1995, he was with the Istituto Nazionale di Metodologie e Tecnologie per la Microettronica (IMETEM), Catania, Italy, an institute of the Italian National Research Council, where he was involved with the application of computer simulation to process and device engineering in microelectronics. In 1995, he joined FhG-IIS B, Erlangen, Germany, in the frame of the European program Human Capital and Mobility, where he was involved in modeling of sputtering mechanisms in silicon during SIMS analyses. Since December 1995, he has been with the R&D Department, STMicroelectronics, Catania, Italy. He is involved in developing new device concepts for high-voltage power devices and in process research of silicon and silicon carbide. He is the author or coauthor of more than 30 papers in journals and conference proceedings. He is the holder of 15 patents.