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Research Interests

Papers共 8 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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期刊级别
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合作机构
Gate Oxide Reliability: Upcoming Trends, Challenges, and Opportunities
B. Kaczer, R. Degraeve, J. Franco, T. Grasser,Ph J. Roussel,E. Bury,P. Weckx,A. Chasin, S. Tyaginov, M. Vanclemacle, A. Grill, B. O'Sullivan, J. Diaz Fortuny, P. Saraza Canflanca,M. Waltl, P. Rinaudo, Y. Zhao, E. Kao,R. Asanovski, E. Catapano, A. Beckers,A. Vici,B. Truijen, Y. Higashi,S. Clima, Y. Xiang, D. Sangani,L. Panarella,Q. Smets,T. Knobloch, D. Waldhoer, B. Van Troeye, Y. Guo,A. Kruv, K. Viswakarma, M. Gonzalez, D. Linten
2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024pp.3-4, (2024)
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Exploring Manufacturability of Novel 2D Channel Materials: 300 Mm Wafer-Scale 2D NMOS & PMOS Using MoS2, WS2, & WSe2
C. J. Dorow,T. Schram,Q. Smets,K. P. O’Brien,K. Maxey, C.-C. Lin,L. Panarella,B. Kaczer,N. Arefin, A. Roy, R. Jordan,A. Oni,A. Penumatcha,C. H. Naylor, M. Kavrik,D. Cott, B. Graven,V. Afanasiev, P. Morin,I. Asselberghs, C. J. Lockhart de La Rosa,G. Sankar Kar,M. Metz,U. Avci
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
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Author Statistics

#Papers: 8

#Citation: 2

H-Index: 1

G-Index: 1

Sociability: 4

Diversity: 0

Activity: 1

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