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个人简介
Junji Kotani was born in Hokkaido, Japan. He received the B.E. and M.E. degrees in 2003 and 2005, respectively, and the Ph.D. degree in electrical engineering from Hokkaido University, Sapporo, Japan, in 2008.
He was with the Eindhoven University of Technology, Eindhoven, The Netherlands, from 2008 to 2010, worked on the growth of InAs/InP quantum dots by metalorganic vapor phase epitaxy (MOVPE) as a Post-Doctoral Research Associate. He is currently with Fujitsu Laboratories, Kanagawa, Japan. His current research interests include the growth of GaN-related materials by MOVPE and its application to high-power electron devices.
Dr. Kotani is a member of the Japan Society of Applied Physics.
研究兴趣
论文共 97 篇作者统计合作学者相似作者
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IEICE transactions on electronicsno. 10 (2023): 605-613
IEEE journal of the Electron Devices Society (2023): 101-106
APPLIED PHYSICS EXPRESSno. 11 (2022)
physica status solidi (a)no. 7 (2022)
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura,Atsushi Yamada,Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha,Junji Kotani,Masaru Sato, Takao Ohki
openalex(2022)
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作者统计
#Papers: 96
#Citation: 1489
H-Index: 23
G-Index: 35
Sociability: 5
Diversity: 1
Activity: 1
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