基本信息
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职业迁徙
个人简介
Kenneth F. Sato received the B.S. and M.S. degrees from the University of Hawaii at Manoa, both in electrical engineering.
He is a staff engineer in Northrop Grumman Aerospace System's Microelectronics Center, Technology Development Department. He has 11 years of experience in development of GaAs and InP HBT technologies for MMIC's, analog, and high-speed digital circuits. His work focuses on HBT process development, modeling and reliability.
研究兴趣
论文共 8 篇作者统计合作学者相似作者
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L Dang,E Kaneshiro,J Wang,C Monier, J Eldredge,K Sato,PC Chang,D Sawdai,R Bhorania,A Gutierrez-Aitken, M Goosky
ELECTROCHEMICAL SOCIETY SERIESno. 2.0 (2004): 103-110
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Donald Sawdai,E Kaneshiro,Augusto Gutierrezaitken,P C Grossman,Kenichi Sato, Wooseok Kim, G W Leslie,J W Eldredge,T Block,P Chin, Lan Tran,A K Oki,D C Streit
作者统计
#Papers: 8
#Citation: 105
H-Index: 6
G-Index: 7
Sociability: 4
Diversity: 1
Activity: 0
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