基本信息
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Career Trajectory
Bio
Kenji Kurishima received the B.S., M.S., and Dr. Eng. degrees in
physical electronics from the Tokyo Institute of Technology, Tokyo, Japan, in 1987, 1989, and 1997, respectively.
Since 1989, he has been with the NTT Atsugi Electrical Communications Laboratories, Atsugi, Japan, where he has been
engaged in the research and development of InP-based HBTs and MOVPE growth. His current research interests include the
design and fabrication of high-speed electronic devices for future communications systems.
Research Interests
Papers共 222 篇Author StatisticsCo-AuthorSimilar Experts
By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
ATOMIC LAYER DEPOSITION APPLICATIONS 14no. 6 (2018): 31-38
semanticscholar(2017)
Cited0Views0Bibtex
0
0
ECS Transactionsno. 9 (2016): 97-102
Cited23Views0Bibtex
23
0
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Author Statistics
#Papers: 221
#Citation: 3565
H-Index: 28
G-Index: 43
Sociability: 6
Diversity: 3
Activity: 0
Co-Author
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- 合作者
- 学生
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