Jung-Hwan Lee

Jung-Hwan Lee received the B.S. degree from Hanyang University, Seoul, Korea, in 1983, the M.S. degree from the Korea Advanced Institute of Science and Technology, Seoul, Korea, in 1985, and the Ph.D. degree in chemical engineering from Drexel University, Philadelphia, PA, in 1996. From 1985 to 1988, he was a Device Researcher at Samsung Electronics, developing SRAM memories such as 16-, 64-, and 256-K SRAM. In 1989, he joined MagnaChip Semiconductor Ltd., Cheongju-si, Korea, a spinoff of Hynix Semiconductor Inc., in October 2004. He has been engaged in the development of 4-, 16-, and 64-M DRAM as a Device and Process Integration Engineer until 1996. Since 1996, he has been the Project Leader for the development of embedded memories such as embedded DRAM, Flash, and electrically erasable programmable ROM. His current research areas are high-voltage device, power device, Schottky diode, and 1 TRAM.