Zhou Jiaan - Chinese Academy of Sciences

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论文共 20 篇作者统计合作学者相似作者

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Enhanced Luminescence Efficiency in GaN-based Blue Laser Diodes by H Plasma Technology

Lu Wang,Kun Xu,Guohao Yu,Xiaoyu Ren,Xulei Qin,Li Zhang,Tiwei Chen,Fan Zhang,Fangzhi Li,Jiaan Zhou, Bangda Xue,Zhongming Zeng,Jianping Liu,Baoshun Zhang

OPTICS EXPRESSno. 20 (2024): 34492-34499

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Effective Suppression of Interface States in Recessed-Gate MIS-HEMTs by TMAH Wet Etching

Yu Li,Guohao Yu, Heng Wang,Jiaan Zhou,Zheming Wang,Runxian Xing,Shaoqian Lu,An Yang,Bingliang Zhang,Yong Cai,Zhongming Zeng,Baoshun Zhang

APPLIED PHYSICS EXPRESSno. 1 (2024)

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High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

Bohan Guo,Guohao Yu,Li Zhang,Jiaan Zhou,Zheming Wang,Runxian Xing,An Yang, Yu Li, Bosen Liu,Xiaohong Zeng,Zhongkai Du,Xuguang Deng,Zhongming Zeng,Baoshun Zhang

Crystalsno. 3 (2024): 253

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Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 Nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Yu Li,Jiaan Zhou,Runxian Xing,Shaoqian Lu,An Yang, Bohan Guo, Bosen Liu,Zhongkai Du,Guohao Yu,Zhongming Zeng,Yong Cai,Baoshun Zhang

ACS APPLIED ELECTRONIC MATERIALSno. 1 (2024): 150-154

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Annealing Process on MOS Channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

Jiaan Zhou,An Yang,Guohao Yu,Runxian Xing, Bohan Guo, Chunfeng Hao,Yu Li, Bosen Liu, Huixin Yue, Jinxia Jiang,Li Zhang,Xuguang Deng,Zhongming Zeng,Baoshun Zhang,Xinping Zhang

physica status solidi (RRL) – Rapid Research Letters (2024)

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Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate

Runxian Xing,Ping Zhang,Hongyang Guo,Guohao Yu,Jiaan Zhou,An Yang,Shige Dai,Zhongming Zeng, Xingping Zhang,Baoshun Zhang

PLASMONICSno. 5 (2024): 2545-2552

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Annealing Process on Metal-Oxide-Semiconductor Channel Properties for Quasivertical GaN-on-Sapphire Trench Metal-Oxide-Semiconductor Field-Effect Transistor

Jiaan Zhou,An Yang,Guohao Yu,Runxian Xing, Bohan Guo, Chunfeng Hao,Yu Li, Bosen Liu, Huixin Yue, Jinxia Jiang,Li Zhang,Xuguang Deng,Zhongming Zeng,Baoshun Zhang,Xinping Zhang

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2024)

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High-Performance N-Polar GaN/AlGaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical-Mechanical-Polishing-Incorporated Layer Transfer Technology

Bohan Guo,Guohao Yu,Li Zhang,Jiaan Zhou,Zheming Wang,Runxian Xing,An Yang,Yu Li, Bosen Liu,Xiaohong Zeng,Zhongkai Du,Xuguang Deng,Zhongming Zeng,Baoshun Zhang

CRYSTALSno. 3 (2024)

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Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET

Jiaan Zhou,Wenxin Tang,Tao Ju,Heng Wang,Guohao Yu,Xin Zhou,Li Zhang,Kun Xu,Xuan Zhang,Zhongming Zeng,Xinping Zhang,Baoshun Zhang

ACS Applied Materials & Interfacesno. 21 (2023): 26159-26165

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Comparing Electrical Performance of Lateral GaN Schottky Barrier Diode with A-Plane ($11\bar2 0$) and M-Plane ($1\bar1 00$) Nonpolar Sidewall Contact

Jiaan Zhou,Guohao Yu, Chunfeng Hao,Xinping Zhang

2023 20th China International Forum on Solid State Lighting &amp 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA IFWS) (2023)

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