Chiijye Wang - Taiwan Semiconductor Research Institute

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论文共 13 篇作者统计合作学者相似作者

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Lifting method to analyze pipeline deformation

D. L. Guo, C. D. Wu,C. J. Wang,Y. L. Wang, M. L. He, L. J. Zhang,H. C. Ji

Metalurgijano. 2 (2024): 241-244

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Deformation analysis of running electric hoist

C. D. Wu, D. L. Guo,C. J. Wang,Y. L. Wang,M. W. He,J. L. Zhang,H. C. Ji

METALURGIJAno. 3-4 (2023): 423-426

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Fabrication of $\Omega$ -gated Negative Capacitance FinFETs and SRAM

P.-J. Sung,C.-J. Su,D. D. Lu,S.-X. Luo,K.-H. Kao, J.-Y. Ciou, C.-Y. Jao,H.-S. Hsu,C.-J. Wang,T.-C. Hong, T.-H. Liao,C.-C. Fang,Y.-S. Wang, H.-F. Huang, J.-H. Li, Y.-C. Huang,F.-K. Hsueh,C.-T. Wu,W. C.-Y. Ma,K.-P. Huang,Y.-J. Lee,T.-S. Chao,J.-Y. Li,W.-F. Wu,W.-K. Yeh, Y.-H. Wang

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2019）

引用1浏览0EIWOS引用

Initial severity of erectile dysfunction is the most important predictor of low-intensity extracorporeal shockwave therapy to convert non-responder to responder of phosphodiesterase type 5 inhibitors

C. Liu,C. Tsai,Y. Lee,C. Wang

BJU INTERNATIONAL（2019）

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Voltage Transfer Characteristic Matching By Different Nanosheet Layer Numbers Of Vertically Stacked Junctionless Cmos Inverter For Sop/3d-Ics Applications

P.-J. Sung, C.-Y. Chang, L.-Y. Chen,K.-H. Kao,C.-J. Su, T.-H. Liao,C.-C. Fang,C.-J. Wang,T.-C. Hong, C.-Y. Jao,H.-S. Hsu,S.-X. Luo,Y.-S. Wang, H.-F. Huang,J.-H. Li,Y.-C. Huang,F.-K. Hsueh,C.-T. Wu,Y.-M. Huang,F.-J. Hou,G.-L. Luo,Y.-L. Shen,W. C.-Y. Ma,K.-P. Huang,K.-L. Lin,S. Samukawa,Y. Li,G.-W Huang,Y.-J. Lee, J.-Y. Li,W.-F. Wu,J.-M. Shieh,T.-S. Chao,W.-K. Yeh, Y.-H. Wang

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2018）

引用12浏览0EIWOS引用

A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 Nm Node

Y. -T Tang,C. -J. Su,Y. -S. Wang,K. -H. Kao,T. -L. Wu,P. -J. Sung,F. -J. Hou,C. -J. Wang,M. -S. Yeh,Y. -J. Lee,W. -F. Wu,G. -W. Huang,J. -M. Shieh,W. -K. Yeh,Y. -H. Wang

2018 IEEE Symposium on VLSI Technology（2018）

引用12浏览0EIWOS引用

Ge FinFET CMOS Inverters with Improved Channel Surface Roughness by Using In-Situ ALD Digital O3 Treatment

M. -S. Yeh,G. -L. Luo,F. -J. Hou,P. -J. Sung,C. -J. Wang,C. -J. Su,C. -T. Wu, Y. -C. Huang,T. -C. Hong,T. -S. Chao,B. -Y. Chen,K. -M. Chen,Y. -C. Wu,M. Izawa,M. Miura,M. Morimoto,H. Ishimura,Y. -J. Lee,W. -F. Wu,W. -K. Yeh

IEEE journal of the Electron Devices Society (2018): 1227-1232

引用13浏览0EIWOS引用

Nano-Scaled Ge Finfets with Low Temperature Ferroelectric Hfzrox on Specific Interfacial Layers Exhibiting 65% Ss Reduction and Improved I-On

C. -J. Su,Y. -T Tang, Y. -C. Tsou,P. -J. Sung,F. -J. Hou,C. -J. Wang, S. -T. Chung,C. -Y. Hsieh,Y. -S. Yeh,F. -K. Hsueh,K. -H. Kao,S. -S. Chuang,C. -T. Wu, T. -Y. You, Y. -L. Jian,T. -H. Chou,Y. -L. Shen,B. -Y. Chen,G. -L. Luo,T. -C. Hong,K. -P. Huang,M. -C. Chen,Y. -J. Lee,T. -S. Chao,T. -Y. Tseng,W. -F. Wu,G. -W. Huang,J. -M. Shieh,W. -K. Yeh, Y. -H. Wang

2017 SYMPOSIUM ON VLSI TECHNOLOGY（2017）

引用25浏览0EIWOS引用

Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

Chun Jung Su,T.-C. Hong, Y. C. Tsou,Fu Ju Hou,Po-Jung Sung,M.-S. Yeh,Chia-Chen Wan,Kuo Hsing Kao,Y.-T. Tang,Chin-Fong Chiu,C.-J. Wang, S.-T. Chung, T.-Y. You, Y.-C. Huang,Chien Ting Wu,Kun Lin Lin,Guang-Li Luo,K. P. Huang,Yao Jen Lee,Tien Sheng Chao,Wen Fa Wu,Guo Wei Huang,Jia-Min Shieh,Wen-Kuan Yeh, Y. H. Wang

2017 IEEE International Electron Devices Meeting (IEDM)（2017）

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