Jae Cheol Shin was born in Korea in 1975. He received the B.S. and M.S. degrees in physics from Kyung Hee University, Yongin, Korea, in 2001 and 2003, respectively, and the Ph.D. degree in electrical engineering from the University of Wisconsin-Madison, Madison, in 2010. At the University of Wisconsin-Madison his research focused on highly temperature insensitive, deep-well quantum cascade lasers, as well as III-V semiconductor growth using metal organic chemical vapor deposition (MOCVD). After graduation, he was with the Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign as a Postdoctoral Fellow pursuing research in InGaAs nanowire growth using MOCVD for various electronic- and photonic-device applications. He is currently a Senior Researcher in photonics-energy center at the Korea Photonics Technology Institute, Gwangju, Korea, where he has researched novel III-V compound semiconductor devices. He has authored or coauthored more than 30 technical papers.