Ichiro Mizushima

Ichiro Mizushima was born in Tokyo, Japan, in 1962. He received the B.S., M.S., and Ph.D. degrees from Keio University, Yokohama, Japan, in 1984, 1986, and 1989, respectively, all in electrical engineering. His Ph.D. work involved the solid-phase crystallization of amorphous silicon. In 1990, he joined the Ultralarge-Scale Integration (ULSI) Research Center, Toshiba Corporation, Kawasaki, Japan, where he was engaged in doping technology in Si. He is currently with the Device Process Development Center, Corporate Research and Development Center, Semiconductor Company, Toshiba Corporation, Yokohama, Japan, and has been engaged in the research and development for the process technology of high-density LSI devices, particularly the research of the deposition and growth of advanced thin films. Dr. Mizushima is a member of the Japan Society of Applied Physics; the Institute of Electronics, Information and Communication Engineers; and the Surface Science Society of Japan.