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个人简介
Ganesh Balakrishnan (Senior Member, IEEE) received the B.Eng. degree in electronics and communications from the University of Madras, the M.S. degree in electrical engineering from the University of Toledo, and the Ph.D. degree in optical science and engineering from The University of New Mexico in 2006. He is currently a Professor of electrical and computer engineering at The University of New Mexico. His research interests include semiconductor epitaxy using molecular beam epitaxy of arsenide and antimonide-based compound semiconductors, including the development of semiconductor lasers, infrared detectors, and photovoltaic devices.
研究兴趣
论文共 274 篇作者统计合作学者相似作者
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY Bno. 1 (2024)
Optical Components and Materials XXI (2024)
Silicon Photonics XIX (2024)
OPTICAL MATERIALS EXPRESSno. 2 (2024): 328-339
High-Power Diode Laser Technology XXII (2024)
Journal of applied physicsno. 14 (2023)
2023 IEEE PHOTONICS CONFERENCE, IPCpp.1-2, (2023)
A. T. Newell,J. V. Logan,R. A. Carrasco,Z. M. Alsaad,C. P. Hains, J. M. Duran,G. Ariyawansa,G. Balakrishnan,D. Maestas,C. P. Morath,S. D. Hawkins, A. Hendrickson,P. T. Webster
Applied physics lettersno. 17 (2023)
Erika M. Sommer,Sami A. Nazib,Troy A. Hutchins-Delgado,Hosuk Lee, Ruth A. Gyan-Darkwa,Erum Jamil,Thomas J. Rotter,Sadhvikas Addamane,John Nogan, Antony R. James,Matthew F. Doty,Joshua M. O. Zide,Ganesh Balakrishnan,Marek Osinski
2023 IEEE PHOTONICS SOCIETY SUMMER TOPICALS MEETING SERIES, SUMpp.1-2, (2023)
OPTO-ELECTRONICS REVIEWno. 1 (2023)
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作者统计
#Papers: 274
#Citation: 3875
H-Index: 31
G-Index: 50
Sociability: 7
Diversity: 3
Activity: 31
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