Christian Sandow

Christian Sandow received the M.S. degree in physics from the University of Bonn, Bonn, Germany in 2005 and the Ph.D. degree in physics from the Technical University of Aachen, Aachen, Germany, in 2010. His Ph.D. dissertation investigated the fabrication and modeling of silicon nanowire tunnel field-effect transistors (FET). Since 2010, he has been with PNSensor GmbH, in Munich, Germany, as a Research Staff Member. His current research interests include modeling and fabrication of active silicon pixel detectors (depleted P-FET) as well as transport in nanostructures, particularly steep-slope devices for future low-power device applications. Dr. Sandow was the recipient of a nine-month research scholarship from the German Academic Exchange Service (DAAD) to conduct a portion of his Ph.D. research at Purdue University, West Lafayette, IN, from 2008 to 2009.