Chinsung Park - School of School of Electrical and Computer Engineering, Georgia Institute of Technology 2

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Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors under Bipolar Stress Conditions

Priyankka Gundlapudi Ravikumar,Prasanna Venkatesan Ravindran,Khandker Akif Aabrar,Taeyoung Song,Sharadindu Gopal Kirtania,Dipjyoti Das,Chinsung Park,Nashrah Afroze,Mengkun Tian,Shimeng Yu,Ahmad Ehtesham Islam,Suman Datta,Souvik Mahapatra,Asif Khan

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

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Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors

Chinsung Park,Prasanna Venkat Ravindran,Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang,Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo,Jae Hur,Hang Chen,Mengkun Tian,Winston Chern,Shimeng Yu,Asif Islam Khan

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2024): 569-572

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Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications

Dipjyoti Das, Hyeonwoo Park, Zekai Wang, Chengyang Zhang,Prasanna Venkatesan Rayindran,Chinsung Park,Nashrah Afroze,Po-Kai Hsu,Mengkun Tian,Hang Chen, Winston Chem,Suhwan Lim, Kwangsoo Kim,Kijoon Kim,Wanki Kim,Daewon Ha,Shimeng Yu,Suman Dutta,Asif Khan

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.708-710, (2024)

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Disturb and Its Mitigation in Ferroelectric Field-Effect Transistors with Large Memory Window for NAND Flash Applications

Prasanna Venkatesan,Chinsung Park,Taeyoung Song, Lance Fernandes,Dipjyoti Das,Nashrah Afroze, Priyankka Gundlapudi Ravikumar,Mengkun Tian,Hang Chen,Winston Chern,Kijoon Kim,Jongho Woo,Suhwan Lim, Kwangsoo Kim,Wanki Kim,Daewon Ha,Souvik Mahapatra,Shimeng Yu,Suman Datta, Asif Khan

IEEE Electron Device Lettersno. 99 (2024): 1-1

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Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation

Dipjyoti Das, Lance Fernandes,Prasanna Venkatesan Ravindran,Taeyoung Song,Chinsung Park,Ashrah Afroze,Mengkun Tian,Hang Chen, Winston Chem,Kijoon Kim,Jongho Woo,Suhwan Lim, Kwangsoo Kim,Wanki Kim, Daewon Ha,Shimeng Yu,Suman Datta,Asif Khan

2024 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW (2024)

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The Origin of Memory Window Closure with Bipolar Stress Cycling in Silicon Ferroelectric Field-Effect-transistors

Matthias Passlack,Nujhat Tasneem,Chinsung Park,Prasanna Venkat Ravindran,Hang Chen,Dipjyoti Das,Shimeng Yu,Edward Chen,Jer-Fu Wang,Chih-Sheng Chang, Yu-Ming Lin,Iuliana Radu,Asif Khan

JOURNAL OF APPLIED PHYSICSno. 13 (2024)

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Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications

Dipjyoti Das, Hyeonwoo Park, Zekai Wang, Chengyang Zhang,Prasanna Venkatesan Ravindran,Chinsung Park,Nashrah Afroze,Po-Kai Hsu,Mengkun Tian, Hang Chen,Winston Chern,Suhwan Lim, Kwangsoo Kim,Kijoon Kim,Wanki Kim,Daewon Ha,Shimeng Yu,Suman Datta,Asif Khan

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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A Ge-Channel Ferroelectric Field Effect Transistor with Logic-Compatible Write Voltage

Dipjyoti Das,Prasanna Venkatesan Ravindran,Chinsung Park,Nujhat Tasneem,Zheng Wang,Hang Chen,Winston Chern,Shimeng Yu,Suman Datta,Asif Khan

IEEE Electron Device Letters（2023）

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Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures with Ge Channel for Reduced Write Voltages

Chinsung Park,Harshil Kashyap,Dipjyoti Das,Jae Hur,Nujhat Tasneem,Sarah Lombardo,Nashrah Afroze,Winston Chern,Andrew C. Kummel,Shimeng Yu,Asif Islam Khan

IEEE Transactions on Electron Devicesno. 8 (2023): 4479-4483

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