基本信息
浏览量:110
职业迁徙
个人简介
Major areas of research
1. DRAM capacitor dielectric films and process integration
- (Ba,Sr)TiO3, SrTiO3, TiO2, BixTiySizO, Al2O3/HfO2 bi-layer dielectrics film research by MOCVD and ALD
- Metal electrode (Ru, Pt) MOCVD
- Metal (Ru, Pt)/poly-Si electrodes and barrier integration
- New structure and integration schemes
2. High-k gate dielectric films for MOSFETs
- Al2O3, HfO2, HfxSi1-xO2, TiO2 films by MOCVD and ALD
- Poly-Si/metal electrode integration
- Long channel and short channel MOSFET fabrication
3. Ferroelectric thin films and devices
- Pb(Zr,Ti)O3 thin film growth by MOCVD and ALD
- FeRAM device integration and reliability
4. New memory devices
- Resistive change random access memories
- Phase change random access memories
5. Dielectric phenomenology of high dielectric films and Leakage current mechanism for MIM and MIS capacitors
- C-V, I-V and P-V measurement in wide temperature range and phase transition behavior of thin film ferroelectrics
- modeling the leakage current phenomena and prove the model using numerical analysis
1. DRAM capacitor dielectric films and process integration
- (Ba,Sr)TiO3, SrTiO3, TiO2, BixTiySizO, Al2O3/HfO2 bi-layer dielectrics film research by MOCVD and ALD
- Metal electrode (Ru, Pt) MOCVD
- Metal (Ru, Pt)/poly-Si electrodes and barrier integration
- New structure and integration schemes
2. High-k gate dielectric films for MOSFETs
- Al2O3, HfO2, HfxSi1-xO2, TiO2 films by MOCVD and ALD
- Poly-Si/metal electrode integration
- Long channel and short channel MOSFET fabrication
3. Ferroelectric thin films and devices
- Pb(Zr,Ti)O3 thin film growth by MOCVD and ALD
- FeRAM device integration and reliability
4. New memory devices
- Resistive change random access memories
- Phase change random access memories
5. Dielectric phenomenology of high dielectric films and Leakage current mechanism for MIM and MIS capacitors
- C-V, I-V and P-V measurement in wide temperature range and phase transition behavior of thin film ferroelectrics
- modeling the leakage current phenomena and prove the model using numerical analysis
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