Christopher P. D’Emic - AI Profile

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论文共 10 篇作者统计合作学者相似作者

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METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP FABRICATION

Kevin K Chan,C Demic, Younghee Kim,Daegyu Park,Jengbang Yau

mag（2013）

引用25浏览0引用

Complementary thin-base symmetric lateral bipolar transistors on SOI

Jin Cai,Tak H Ning,C Demic,Kevin K Chan,Wilfried Haensch,Jengbang Yau,Daegyu Park

Electron Devices Meeting（2011）

引用46浏览0EIWOS引用

Silicon-on-Insulator MOSFETs with Hybrid Crystal Orientations

Mingming Yang,K Chan,Ashish Kumar, S H Lo,Jeffrey W Sleight,L Chang,R Rao,Stephen W Bedell,Asok Kumar Ray,J Ott, J N Patel,C Demic,Judith M Rubino,Yan Zhang,Leathen Shi,Steven E Steen,E Sikorski,J Newbury, Robert R Meyer,B To,P Kozlowski,W G Graham,S Maurer, S Medd, D Canaperi,L Deligianni,J A Tornello, G W Gibson,Timothy J Dalton,Meikei Ieong,Ghavam G Shahidi

Honolulu, HI（2006）

引用12浏览0EIWOS引用

Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier

N A Bojarczuk,Kevin K Chan,C Demic,Evgeni P Gousev,Supratik Guha,P Jamison,Larsake Ragnarsson

mag（2005）

引用56浏览0引用

Device Design Considerations For Ultra-Thin Soi Mosfets

Bruce B Doris,Meikei Ieong,T Zhu, Yanxia Zhang,M Steen,Wesley C Natzle,S Callegari,Vijay Narayanan,Jun Cai,S H Ku,P Jamison, Yiping Li,Z Ren,Victor Ku, Timothy L Boyd,T Kanarsky,C Demic, M Newport,D Dobuzinsky,Sadanand V Deshpande,J Petrus,R Jammy,Wilfried Haensch

Washington, DC, USApp.631-634, (2003)

引用77浏览0EIWOS引用

High Performance Cmos Fabricated on Hybrid Substrate with Different Crystal Orientations

M Yang,M Ieong,L Shi,K Chan,V Chan, A Chou,E Gusev,K Jenkins,D Boyd, Y Ninomiya, D Pendleton, Y Surpris, D Heenan,J Ott,K Guarini,C D'Emic, M Cobb, P Mooney, B To,N Rovedo,J Benedict,R Mo,H Ng

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST（2003）

引用393浏览0EIWOS引用

393

Process of passivating a metal-gated complementary metal oxide semiconductor

A Callegari,C Demic,Hyungjun Kim,F R Mcfeely,Vijay Narayanan,John J Yurkas

mag（2003）

引用26浏览0引用

Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics

Evgeni Gousev, Atul C Ajmera,C Demic

mag（2003）

引用34浏览0引用

Method for improved plasma nitridation of ultra thin gate dielectrics

Mukesh V Khare,C Demic, Thomas T Hwang,P Jamison,James J Quinlivan,Beth A Ward

mag（2002）

引用39浏览0引用

80 Nm Poly-Silicon Gated N-Fets With Ultra-Thin Al2o3 Gate Dielectric For Ulsi Applications

D A Buchananl,E P Gusev,E Cartier,Harald F Okornschmidt,Kern Rim,M Gribelyuk,Anda C Mocuta, A C Ajmera,Matthew Copel,Sudipto Guha,N A Bojarczuk,A Callegari,C Demic,Pawel M Kozlowski,Kevin K Chan,R M Fleming,P Jamison, I J Brown,Richard L Arndt

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGESTpp.223-226, (2000)

引用167浏览0引用

167

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