Andrew M. Greene - IBM | 人才画像

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论文共 29 篇作者统计合作学者相似作者

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Novel Ellipsometry Metrology-Based Machine Learning Technique for Low Sensitivity Characterization of Critical Dimensions Within Gate-All-around Transistors

Houssam Chouaib, Valeria Dimastrodonato, Anderson Chou, Agostino Cangiano,Andrew Cross,Derrick Shaughnessy,Zhengquan Tan, Daniel Schmidt,Curtis Durfee,Shanti Pancharatnam,Julien Frougier,Andrew Greene,Mary Breton

Metrology, Inspection, and Process Control XXXVIII (2024)

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Spectral Interferometry for Fully Integrated Device Metrology

Daniel Schmidt,Manasa Medikonda,Michael Rizzolo, Claire Silvestre,Julien Frougier,Andrew Greene,Mary Breton,Aron Cepler,Jacob Ofek, Itzik Kaplan,Roy Koret,Igor Turovets

Journal of micro-nanopatterning, materials, and metrologyno. 03 (2023)

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Review of Nanosheet Metrology Opportunities for Technology Readiness

Mary A. Breton,Daniel Schmidt,Andrew Greene,Julien Frougier,Nelson Felix

Journal of Micro/Nanopatterning, Materials, and Metrologyno. 02 (2022)

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Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

Daniel Schmidt,Aron Cepler,Curtis Durfee,Shanti Pancharatnam,Julien Frougier,Mary Breton,Andrew Greene,Mark Klare,Roy Koret,Igor Turovets

IEEE transactions on semiconductor manufacturing（2022）

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Review of nanosheet metrology opportunities for technology readiness

Mary A. Breton,Daniel Schmidt,Andrew Greene,Julien Frougier,Nelson Felix

JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3（2022）

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Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors

ECS transactionsno. 4 (2021): 217-227

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OCD Enhanced: Implementation and Validation of Spectral Interferometry for Nanosheet Inner Spacer Indentation

Daniel Schmidt,Curtis Durfee,Shanti Pancharatnam,Manasa Medikonda,Andrew Greene,Julien Frougier,Aron Cepler, Gilad Belkin,Dror Shafir,Roy Koret, Roy Shtainman,Igor Turovets,Shay Wolfling

Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV (2021)

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Performance of Stacked Nanosheet Gate All Around FET’s with EUV Patterned Gate and Sheets

Indira Seshadri,Jennifer Church, Prateek Hundekar,Mary Breton,Jingyun Zhang,Eric Miller,Andrew Greene,Julien Frougier, Chris Waskiewicz,Tao Li,Tsung-Sheng Kang, Daniel Dechene,Carl Radens,Stuart Sieg,Veeraraghavan Basker,Nelson Felix,Chris A. Mack

Extreme Ultraviolet (EUV) Lithography XII (2021)

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Nanosheet Metrology Opportunities for Technology Readiness

Mary A. Breton,Daniel Schmidt,Andrew Greene,Julien Frougier,Curtis Durfee,Indira Seshadri,Jennifer Church,Veeraraghavan Basker,Nelson Felix

Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV (2021)

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Enablement of Next Generation Nanosheet Technology

Nicolas Loubet,Curtis Durfee,Julien Frougier,Shogo Mochizuki,Maruf Bhuiyan,Ruqiang Bao,Andrew Greene,Eric Miller,Indira Seshadri

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials (2021)

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